unisonic technologies co., ltd UT2311 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-365.a 20v p-channel enhancement mode mosfet ? features * extremely low on-resistance due to high density cell * perfect thermal performance and electrical capability * with advanced technology of trench process * halogen free ? symbol ? ordering information pin assignment ordering number package 1 2 3 packing UT2311g-ae3-r sot-23 s g d tape reel ? marking 23mg www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2311 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-365.a ? absolute maximum ratings (ta = 25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current i d -4 a pulsed drain current i dm -20 a power dissipation (ta=25c) p d 1.25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction to ambient (pcb mounted) ja 100 c/w note: surface mounted on fr4 board t 5sec. ? electrical characteristics (ta = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -20 v drain-source leakage current i dss v ds =-16v,v gs =0v -1.0 a gate-source leakage current i gss v gs =8v, v ds =0v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.45 v v gs =-4.5v, i d =-4.0 a 45 55 m ? static drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-2.5 a 75 85 m ? on-state drain current i d(on) v ds -10v, v gs =-4.5v -6 a dynamic parameters b input capacitance c iss 970 pf output capacitance c oss 485 pf reverse transfer capacitance c rss v ds =-6v, v gs =0 v, f =1.0mhz 160 pf switching parameters b turn-on delay time t d(on) 18 ns turn-on rise time t r 45 ns turn-off delay time t d(off) 95 ns turn-off fall-time t f v dd =-4v, v gen =-4.5v, i d =-1a r l =4 ? , r g =6 ? 65 ns total gate charge q g 8.5 12 nc gate source charge q gs 1.5 nc gate drain charge q gd v gs =-4.5v, v ds =-6v, i d =-4.0a 2.1 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0 v, i s =-1.6a, -0.8 -1.2 v maximum continuous drain-source diode forward current i s -1.6 a note: pulse test; pulse width 300 s, duty cycle 2%. www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2311 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-365.a ? test circuits and waveforms switching test circuit switching waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. www.datasheet.net/ datasheet pdf - http://www..co.kr/
|
